M.Sc. Katri Avarmaa, M.Sc. Simon Yliaho, Prof. Pekka Taskinen
Some rare and valuable metals, such as indium and gallium, are essential in the modern electric and
electronic applications. Significant growth in the production of e-devices has created a high pressure
to supply these critical metals. At the same time, high volumes of waste electric and electronic
equipment (WEEE) are produced. Thus, in order to meet the increasing demand and follow the sustainability
targets, the recoveries of these valuable metals from WEEE need to be improved and
maximized. This covers clarifying and investigating their behavior in existing WEEE process and
recovery technologies. In general, copper scrap fraction of WEEE is processed through the pyrometallurgical
metal-making circuits, where copper acts as the carrier metal. This study experimentally
investigates the distribution behavior (LCu/s[Me] = [Me]Copper/[Me]Slag) of indium, gallium and
tin between metallic copper and a FeOx-SiO2-Al2O3 slag. Aluminum is a general impurity metal in
copper scrap and its presence will modify the slag properties, and thus affect the behavior of the
minor elements in the process. To investigate the influence of aluminum in WEEE smelting, the
experiments were executed in alumina crucibles. The experimental conditions were chosen to simulate
both reducing and oxidizing process conditions of black copper smelting within the oxygen
potential range of 10-5 – 10-10 atm at 1300 °C. The employed experimental technique was equilibration-
quenching followed by Electron Probe Micro-Analysis (EPMA). Tin distribution coefficient
between copper and slag increased from 0.1 to 100 as a function of decreasing oxygen partial pressure,
and indium from 0.5 to 50. Gallium was mainly distributed into aluminous spinels with distribution
coefficient (Lsp/s[Ga]) of 2 – 3. Gallium concentrations in copper were mainly below the detection
limit of EPMA, and thus distribution coefficients between copper and slag were defined
reliably only in the lower oxygen partial pressure range (10-9 – 10-10 atm) as 0.1 – 0.5.